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AlGaN/GaN HFET的优化设计 被引量：3

Optimized Design of AlGaN/GaN HFET
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摘要 从自洽求解薛定谔方程和泊松方程出发研究了不同掺杂方式下异质结能带和二维电子气的行为。发现掺杂能剪裁异质结能带的弯曲度、控制电子气的二维特性和浓度。在此基础上研究了不同掺杂方式的掺杂效率。通过掺杂和势垒结构的优化设计,得出了用δ掺杂加薄AlN隔离层的结构,既提高了电子气浓度,又保持电子气的强二维特性。从电子气浓度和栅对电子气的控制力度出发,提出了HFET势垒优化设计中的电子气浓度与势垒层厚度乘积规则。依据二维表面态理论,研究了表面态随帽层掺杂结构的变化。从前述乘积规则和表面态变化出发进行了内、外沟道异质结构的优化设计。优化结构既提高了电子气浓度和跨导,降低了欧姆接触电阻,又抑制了电流崩塌。 From self-consistent solution of Schro dinger equation and Poisson equation the band structure and the behavior of two-dimensional electron gases for AlGaN/GaN heterostructures with different doping structure are investigated.It is found that the band structure winding and two-dimensional electron gases are controlled by the doping structures,from which the doping efficiency for different doping models is compared.By using the optimized design of doping and heterostructures,a heterostructure with δ doping a...
作者 薛舫时
机构地区 单片集成电路与模块国家级重点实验室南京电子器件研究所
出处 《固体电子学研究与进展》 CAS CSCD 北大核心 2007年第2期163-169,共7页 Research & Progress of SSE
关键词 铝镓氮/氮化镓异质结场效应管 优化设计 势垒层掺杂效率 电子气浓度与势垒层厚度乘积 表面态 无电流崩塌设计 AlGaN/GaN HFET optimized design doping efficiency in barrier a product of electron density and barrier width surface states heterostructure design for current-collapse-free HFET
分类号 TN386 [电子电信—物理电子学]
  • 相关文献

参考文献27

  • 1[1]Zhang Y,Sraorchkova,Elsass,et al.Charge control and mobility in AlGaN/GaN transistors:experimental and theoretical studies[J].J Appl Phys,2000,87 (11):7 981-7 987.
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二级参考文献28

  • 1薛舫时.GaN异质结的二维表面态[J].Journal of Semiconductors,2005,26(10):1939-1944. 被引量：8
  • 2Wu Y F,Saxler A,Moore M,et al. 30-W/mm GaN HEMTs by field plane optimization. IEEE Electron Device Lett, 2004,25(3):117.
  • 3Chini A,Buttari D,Coffie R,et al. Power and linearity characteristics of field-plated recessed-gate AlGaN-GaN HEMTs.IEEE Electron Device Lett,2004,25(5):229.
  • 4Tilak V,Green B,Kaper V, et al. Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs. IEEE Electron Device Lett, 2004,22(11): 504.
  • 5Coffie R, Buttari D, Heikman S, et al. p-capped GaN-AlGaN-GaN high-electron mobility transistors. IEEE Electron Device Lett,2004,23(10):588.
  • 6Joshin K,Kikkawa T, Hayashi H, et al. A 174W high-efficiency GaN HEMT power amplifier for WCDMA base station applications. International Electron Devices Meeting, 2003.Technical Digest: 12.6.1.
  • 7Shen L,Coffie R,Buttari D,et al. High-power polarization-engineered GaN/A1GaN/GaN HEMTs without surface passivation. IEEE Electron Device Lett, 2004,25(1): 7.
  • 8Okamoto Y, Ando Y, Nakayawa T, et al. High-power recessed-gate AlGaN-GaN HFET with a field modulating plate.IEEE Trans Electron Devices,2004,51(12):2217.
  • 9Simin G, Hu X, Tarakji A, et al. AlGaN/InGaN/GaN double heterostructure field-effect transistor. Jpn J Appl Phys,2001,40(11A):L1142.
  • 10Neuburger M,Daumiller l,Zimmermann T,et al. Surface stability of InGaN-channel based HFETs. Electron Lett, 2003,39(22):1614.

共引文献6

同被引文献34

引证文献3

二级引证文献4

固体电子学研究与进展
2007年 第2期

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