摘要
利用磁控溅射的方法在单晶S i和非晶S iO2基片上制备了TiN i和TiN iCu形状记忆合金薄膜,并利用示差扫描量热法和基片曲率法研究了薄膜的相变特征及应力随温度的变化。研究结果表明450℃溅射形成的记忆合金薄膜具有良好的形状记忆效应,在微电子机械系统有很好的应用前景。TiN i薄膜降温时出现R相变,因而发生两步相变,而TiN iCu薄膜中马氏体和奥氏体间直接转变。基片以及薄膜成份对相变点有很大的影响。单晶S i片作为基片时,记忆合金薄膜和基片间有很好的结合力,而S iO2作为基片时,记忆合金薄膜容易剥落。
In this work,TiNi and TiNiCu shape memory alloy films on Si and SiO_2 substrate were successfully prepared by co-sputtering of TiNi target with a separated Cu and Ti target.The transformation behavior and stress as a function of temperature were investigated by differential scanning calorimeter(DSC) and curvature measurement methods.The results showed that the shape memory alloy film has a good shape memory effect,which was a promising candidate material for micro-electric mechanical system.For TiNi shape m...
出处
《航空材料学报》
EI
CAS
CSCD
2006年第4期61-64,共4页
Journal of Aeronautical Materials
基金
国家自然科学基金(10175042)
关键词
TiNi基形状记忆合金薄膜
相变特征
示差扫描量热法(DSC)
基片曲率法
TiNi shape memory alloy film
TiNiCu shape memory alloy film
transformation characteristic
differential scanning calorimeter（DSC）
curvature measurement
