摘要
介绍了直流快速熔断体的短路分断试验项目及试验方法,分析了直流快速熔断体的I2t特性、最大电弧能量特性,指出直流快速熔断体可为半导体器件提供有效保护。
The DC short-circuit breaking and verification methods for fuse-link for the protection of semiconductor device were introduced.The I^2t characteristic and max electrical arc energy characteristic of fuse-link for the protection of semiconductor device were analyzed.It is suggested that DC fast fuse-link can protect semiconductor devices efficiently.
出处
《低压电器》
北大核心
2007年第19期54-56,共3页
Low Voltage Apparatus
关键词
半导体设备
熔断体
I2t特性
最大电弧能量
semiconductor device
fuse-link
I^2t characteristic
max electric arc energy
