射频溅射法和电弧离子镀法制备的纳米TiO_2薄膜性能比较

Characteristic comparison of TiO_2 thin film prepared by R.F.magnetron sputtering and arc ion plating

采用射频磁控溅射法和电弧离子镀法制备了纳米TiO2薄膜,并利用XRD、UV-VIS、AFM及通过亲水性和光催化实验对两种方法制备的TiO2薄膜进行了对比表征.结果表明,磁控溅射法的薄膜生长速率只有电弧离子镀法的1/30;前者仅需较低的退火温度就能形成完善的锐钛矿结构;虽然两者有相近的紫外吸收边,但是前者有较大的紫外吸收;磁控溅射法制备的TiO2薄膜表面呈现针状晶结构和具有较大的比表面积;在暗室中保存5 h后,磁控溅射法制备的TiO2膜水的接触角恢复到1°,而后者达到20°;对于光催化降解苯酚,前者有较大的降解率.

Nanoscale TiO_2 thin films are successfully fabricated by R.F.magnetron sputtering(MS)and arc ion plating(AIP) on glass substrates.With the help of XRD,AFM,UV-Vis and through the experiments of hydrophilicity and photocatalyty,the specific study of characteristic comparison has been carried out.It has been found that the film growing rate of MS is much lower than that of AIP,and the films prepared by MS need much lower annealed temperature to get excellent anatase crystal than that prepared by AIP.Films pre...