期刊文献+

Novel Approach to the Design of Optoelectronic Heterostructures Based on Indium and Copper Sulfides

Novel Approach to the Design of Optoelectronic Heterostructures Based on Indium and Copper Sulfides
原文传递
导出
摘要 1 Results Heterostructures,based on ternary CuInS(Se2) chalcogenides and related binary compounds (Cu2-xCh,CuCh,In2Ch3 and InCh; Ch=S,Se) are considered appear to be a matter of choice for producing promising optoelectronic devices.In the present work we propose and consider a very simple way for the formation of sulfide and selenide heterostructures.The main idea is assumes a novel two-stage method of synthesis and nonstoichiometry control for heterostructures of InxS(Se)1-x/Si,CuInS(Se)2/Si and InxS1-...
出处 《复旦学报(自然科学版)》 CAS CSCD 北大核心 2007年第5期730-,共1页 Journal of Fudan University:Natural Science
关键词 HETEROSTRUCTURES copper-indium sulfides NONSTOICHIOMETRY CVT heterostructures copper-indium sulfides nonstoichiometry CVT
  • 相关文献

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部