摘要
用电阻热压烧结法制备了碳化硅颗粒/铜(SiC_p/Cu)复合材料。对复合材料的制备工艺进行了研究。对复合材料的致密化机制进行了分析。用X射线衍射、扫描电镜等分析样品的成分和微观形貌。结果表明:制备SiC_p/Cu复合材料较适宜的烧成条件为700℃,30～40 MPa,5～10 min。所制备的35SiC/65Cu(体积分数)复合材料的最大密度为7.0 g/cm^3,弯曲强度为220 MPa,显微硬度为1.30 GPa。SiC_p/Cu复合材料的电阻烧结致密化是通过软化的铜在烧结压力下的塑性变形来实现的。
Silicon carbide particles/copper (SiCr/Cu) composites were prepared by hot pressing sintering with electric resistance heating.The techniques for preparation of the composites were studied.The densification mechanism of the composites was analyzed. The phase composition and microsfrucfure of the samples were characterized by X-ray diffraction and scanning electron microscopy. The optimum sintering conditions for preparing the composites were at 700℃and 30 to 40 MPa for 5 to 10 min.The maximum density of 35S...
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2007年第S1期191-194,共4页
Journal of The Chinese Ceramic Society
基金
河南省杰出青年科学基金(512002200)资助项目。
关键词
碳化硅颗粒/铜复合材料
热压烧结
致密化
silicon carbide particles/copper composites
hot pressing sintering
densification
