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一种高电源抑制比的CMOS带隙基准电压源 被引量:2

CMOS bandgap reference voltage source with high PSRR
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摘要 基于CSMC 0.5μm CMOS工艺,采用CMOS技术,设计一种高性能的带隙基准电压源.带隙基准电压源输出电压经过电平转换电路,反馈回带隙基准电压源中的运算放大器,可以获得良好的电源特性和带负载能力.采用可修调电阻阵列,精确地控制温度系数.仿真结果表明:在5 V电源电压下,温度系数为8.28×10-6/℃,低频电源抑制比为83 dB. A high-powered bandgap reference voltage source was designed and discussed.The bandgap reference voltage source used the structure that the output voltage through voltage level shift circuit was fed back to provide the power for the bandgap reference voltage source′s operational amplifier to reach high power character and heavy load.The temperature coefficient could be controlled precisely by trimming resistors.The bandgap reference was designed in central semicondnctor manufacturing corporation(CSMC) 0.5 μ...
出处 《华中科技大学学报(自然科学版)》 EI CAS CSCD 北大核心 2007年第11期106-108,共3页 Journal of Huazhong University of Science and Technology(Natural Science Edition)
关键词 带隙基准 反馈 温度系数 电源抑制比 可修调电阻 bandgap reference feedback temperature coefficient PSRR trimming resistors
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参考文献8

  • 1杨卫丽,汪西川,邓霜.一种低功耗差动CMOS带隙基准源[J].微计算机信息,2005,21(06Z):120-121. 被引量:14
  • 2谢毅,朱云涛,邵丙铣.一种低电压的CMOS带隙基准源[J].微电子学与计算机,2005,22(5):110-113. 被引量:12
  • 3陈育林,郑学仁,李若瑜,李斌.高精度CMOS带隙基准源电路的设计[J].中国集成电路,2005,14(1):54-57. 被引量:1
  • 4[4]Allen P,Holberg R.CMOS Analog Circuit Design[M].Beijing:Publishing House of Electronics Industry,2005.
  • 5[5]Brooks T,Weatwick A L.A Low-Power Differential CMOS Bandgap Reference[C] // Solid-State Circuits Conference,Digest of Technical Papers.41st ISSCC,San Francisco:IEEE,1994:248-249.
  • 6[6]Behzad Razavi.Design of analog integrated circuits[M].Xi'an:Xi'an Jiaotong University press,2003.
  • 7[7]Savic M,Milovanovic D.CMOS Bandgap Voltage Reference[C]//XLVII conference of Society for Eelctronics,Telecommunications,Computers,Automation and Nuelear Engineering,Herceg Novi,Serbia and Montenegro:IEEE,ETRAN,2003:356-367.
  • 8[8]Rincon-Mora G A.Voltage References From Diodes to Precision High-Order Bandgap Circuits[M].Texas:Wiley,2000.

二级参考文献15

  • 1[1]Phillip E. Allen, Douglas R. Holberg,CMOS Analog Circuit Design (2nd Edition),Publishing House of Electronics Industry,2002, 157- 269.
  • 2[3]Ka Nang Leung, Member, IEEE, Philip K.T. Mok, Senior Member, IEEE, and Chi Yet Leung, Student Member, IEEE, "A 2-V 23-uA 5.3- ppm/℃ Curvature-Compensated CMOS Bandgap Voltage Reference," IEEE J.Solid-State Circuits, vol. 38, NO. 3, MARCH 2003, 561-564.
  • 3K E Kuijk. A precision reference voltage Source. IEEE J.Solid-state Circuits, 1973, 8: 222~226.
  • 4Banba H, Shiga H, Umezawa A, Miyaba T, Tanzawa T, Atsumi S, Sakui K. A CMOS bandgap reference circuit with sub-1-V operation. IEEE Solid-State Circuits, 1999,34: 5.
  • 5Malcovati P, Maloberti F, Fiocchi C, Pruzzi M. Curvature compensated BiCMOS bandgap with 1-V supply voltage.IEEE Solid-State Circuits, Volume. 2001, 36: 7.
  • 6Annema A-J. Low power bandgap references featuring DTMOSTs. IEEE Solid-State Circuits Volume: 1999, 34: 7.
  • 7M S J Steyart, W M C Sansen. Power supply rejection ratio in operational transactance amplifiers. IEEE trans. Circuits and Systems Ⅰ Volume. 1990, 37: 1077~1084.
  • 8Gianluca Giustolisi, Gaetano Palumbo. A detailed analysis of power-supply noise attenuation in bandgap voltage references. IEEE Trans. Circuits and Systems Ⅰ Volume.2003, 50(2).
  • 9Yannis P Tsividis. Accurate analysis of temperature effects in Ic_VBE characteristics with application to bandgap reference sources. IEEE Solid-State Circuits Volume. 1980,15, (6).
  • 10Andrea Boni. OP-Amps. and Startup Circuits for CMOS Bandgap ReferencesWith Near 1-V Supply. IEEE J. Solid-State Circuits, 2002, 37(10).

共引文献24

同被引文献13

  • 1应建华,彭颖,陈嘉.一种BiCMOS带隙基准电压源的设计[J].华中科技大学学报(自然科学版),2006,34(3):65-67. 被引量:2
  • 2邹雪城,李育超,姜娟,郭振宗.单节锂离子电池保护电路的改进[J].华中科技大学学报(自然科学版),2007,35(7):54-57. 被引量:8
  • 3Lai Xinquan, Xu Ziyou, Li Yanming, et al. A CMOS piecewise curvature-compensated voltage reference [J]. Microelectronics Journal, 2009, 40(1): 39-45.
  • 4Wang Hongyi, Lai Xinquan, Li Yushan, et al. A piecewise-linear compensated bandgap reference[J].Chinese Journal of Semiconductors, 2004, 25 (7) : 771-777.
  • 5Behzad Razavi. Design of analog CMOS integrated circuits[M]. New York: McGraw-Hill, 200:3.
  • 6Allen P E, Holberg D R. CMOS analog circuit design[M]. 2nd Edition. New York: Oxford University Press, 2002.
  • 7I.i Jinghu, Wang Yongsheng, Yu Mingyan, et al. A piecewise curvature-corrected CMOS bandgap reference with negative feedback[J]. Chinese Journal of Semiconductors, 2008, 29(10):1 974-1 979.
  • 8Jiang Tao, Yang Huazhong. Bandgap reference design by means of multiple point curvature compensation[J]. Chinese Journal of Semiconductors, 2007, 28(4) : 490 -495.
  • 9Jin Le, Xing Hanqing, Chen Deqang, et al. A self- calibrated bandgap voltage reference with 0.5 ppm/℃ temperature coefficient [C]// IEEE International Symposium on Circuits and Systems. Island of Kos, Greece: IEEE, 2006:2 853-2 856.
  • 10RAZAVI B.模拟CMOS集成电路设计[M].陈贵灿,程军,张瑞智,等译.西安:西安交通大学出版社,2003:309-329.

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