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Si-SiO_2薄膜的翘曲度及应力分布测试分析

Test and Analysis of Stress Distribution and Warping Degree of Si-SiO_2 Thin Films
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摘要 应用BGS 6341型电子薄膜应力分布测试仪,对硅薄膜翘曲度及应力进行了测试,结合生产工艺对其测试结果加以分析,找出应力产生的各种因素,并加以改进,有效地提升工艺生产水平及稳定性。 Stress distribution and warping degree of Si-SiO2 thin films were tested with BGS 6341 test system. Analysis on the test results are made in combination with the production process. The causes of the stress were found and improved, which have effectively upgraded the process and stability.
出处 《半导体光电》 CAS CSCD 北大核心 2003年第3期209-211,共3页 Semiconductor Optoelectronics
关键词 错位相移 薄膜 翘曲度 应力 dislocation phase shift thin film warping degree stress
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参考文献3

  • 1Weietal C S.Progress in phase-shift based on polarize optics[].Proc of IEEE/VMIC Conference.1989
  • 2Mehregang M.The low tensile stress is suitable for microelectromechanical system[].IEEE Transactions on Electron Devices.1988
  • 3Huang J.Residual stress properties of polysilicon thin film[].Materials Research Society Symposium Proceedings.1990

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