摘要
研制了隔行扫描单片式内线转移结构512×512元PtSi肖特基势垒红外电荷耦合器件(CCD)。器件采用最小2μm设计规则,两层多晶硅结构。器件的像元尺寸为36μm(H)×34μm(V),填充系数为40％。器件工作在80K温度下。在阵列帧频为30帧每秒及镜头为 F/1条件下,器件噪声等效温差为0.15K。用1000K黑体测得其探测率D~*为1×10^(10)cm·Hz^(1/2)/W。对器件设计及性能测试结果进行了介绍。
A 512×512 element monolithic PtSi Schottky-barrier infrared charge coupled device (CCD ) image sensor has been developed. The detector array uses an interlaced scanning interline transfer configeration and a two-level polysilicon structure by 2 μm design rule. The pixel size of this array is 36 μm(H) × 34 μm(V) with 40% fill-factor. The array operates at temperature of about 80 K. The noise equivalent temperature difference of 0. 15 K was obtained with a F/1 optics and the frame rate of 1/30. The detectivit...
出处
《半导体光电》
CAS
CSCD
北大核心
2003年第3期154-156,共3页
Semiconductor Optoelectronics
