摘要
对非平面器件的波导模式进行了理论分析,并在此基础上设计了器件结构,采用LPE的方法进行了器件的生长研究,研制出的p型衬底选择生长型沟道条形结构激光器,其峰值波长为0.832~0.841μm,光谱半宽小于等于3nm,单模尾纤输出功率大于1.8mW。
The waveguide mode of non-planar devices is analysed, on the basis of which the device structure has been designed and research on the LPE growth of the device has been carried out. Finally, the p-type channel substrate selective-growth lasers with the peak wavelength in the range of 0. 832~0. 841 μm was obtained with the spectral line width of less than 3 nm and SMF output power of more than 1. 8 mW.
出处
《半导体光电》
CAS
CSCD
北大核心
2003年第3期157-159,202,共4页
Semiconductor Optoelectronics