高阻GaN基MSM结构紫外探测器的光电流特性

Properties of photocurrent in GaN-based MSM Ultraviolet Photodetectors

用非特意掺杂的高阻GaN薄膜研制了MSM结构紫外探测器。研究发现在5V偏压,365nm光激发条件下,光电流衰减出现振荡现象;响应时间为毫秒量级。未经退火处理,MSM结构的暗态伏安特性呈线性关系,器件的暗电阻出现低阻现象。

Thet metalsemiconductormetal(MSM) ultraviolet photoconductive detectors have been fabricated using compound metals interdigital contacted with high resistant GaN film. It has been found that the photocurrent of the device exhibits vibrating property when it decays at 5V bias voltage and 365nm light excitation. The linear dark IV characteristic and lower dark resistance of the MSM structure without annealing treatment have been also observed.