注碳外延硅光致蓝光发射研究

Photoluminescence of C^(+) Implanted Epitaxial Si

N型外延硅经过碳注入、氢气氛下高温退火和电化学腐蚀后,发出峰值波长位于431nm左右的蓝色荧光。随电化学腐蚀条件的变化,蓝色荧光峰先变强后消失,并出现位于716nm处的红光峰。研究认为样品中C=O复合体杂质镶嵌在退火过程所形成的纳米硅颗粒的表面而形成的纳米硅镶嵌结构导致了蓝光发射。

Blue luminescence with peak wavelength of about (431 nm) is obtained from epitaxial silicon after C^(+) implantation, annealing in hydrogen and electrochemical etching sequentially. With the variation of chemical etching, the blue peak enhances at first, then it decreases and is finally substituted by a red peak. C=O compounds are induced during C^(+) implantation and embedded in the surface of nanometer Si formed during annealing. Finally nanometer silicon with embedded structure is formed, which contri...