液封浮区法生长GaAs晶体中的热应力(英文)

Thermal Stress in GaAs Crystal Grown by Liquid Encapsulant Float-zone Method

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摘要用有限元法对微重力环境下液封浮区(LEFZ)法生长的3英寸GaAs单晶中的热应力进行求解。假设晶体处于准定常状态且为轴对称的各向同性线弹性体。分析了液封厚度、晶体和进料棒转速对晶体中热应力分布的影响。 The thermal stress calculation for a 3 inch diameter gallium arsenide crystal grown by liquid encapsulation full floating zone(LEFZ) method under microgravity has been conducted by using the finite element numerical method.The crystal is assumed to be in a pseudo-steady axisymmetric state and to behave as isotropic linearly elastic body.The effect of the thickness of the encapsulant and the rotation rate of crystal and feed rod on the thermal stress is analyzed.【

作者刘春梅李明伟陈淑仙

机构地区河南科技大学车辆与动力学院重庆大学动力工程学院

出处《材料科学与工程学报》 CAS CSCD 北大核心 2007年第4期514-518,共5页 Journal of Materials Science and Engineering

基金 Supported by NSFC with Grant No.50376078

关键词热应力 LEFZ法 GAAS晶体微重力 thermal stress LEFZ method GaAs crystal microgravity

分类号 O78 [理学—晶体学]

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液封浮区法生长GaAs晶体中的热应力(英文)

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