摘要
介绍一种基于gm/ID参数特性的模拟电路优化设计方法,并以CMOS密勒补偿运算放大器的设计为例具体阐述该方法的基本设计步骤.该方法以统一的gm/ID与ID/(W/L)的关系曲线为基本设计出发点,综合电路的其它设计要求,而提出的一种优化性能指标的设计思路.对所设计的运算放大器模拟仿真验证了这种方法的有效性.
The aim of this paper is to present a transistor optimization methodology for analog integrated CMOS circuits,based on the physics-based gm/ID characteristics,This method dependents curve of gm/ID and ID/(W/L)in all operations regions are integrated with other design specifications,providing solutions close to the optimum.As an example,we show the results obtained for the design of a CMOS Miller operational Transconductance Amplifier,Experimental results are presented,in order to validate the methodology.
出处
《电脑知识与技术(过刊)》
2007年第16期1020-1022,共3页
Computer Knowledge and Technology