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基于pH-ISFET片上系统的研究 被引量：2

A pH-ISFET Based Micro Sensor System on Chip
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摘要 采用标准CMOS工艺实现了基于pH-ISFET微传感器与读出电路的单芯片集成,该芯片包括差分结构ISFET/REFET传感器、金属准参比电极、恒流源和前级读出电路.芯片采用商用0.35μm,4-金属和2-多晶硅标准CMOS工艺流片,整个芯片面积2mm×2.5mm,工作电压3.3V.在标准CMOS工艺代工的基础上,设计并实现了合理的后续工艺流程.微传感系统获得53.65mV/pH的灵敏度和很好的线性度.由此说明,把ISFET微传感阵列与集成电路集成在单个芯片上构建智能型片上系统(SOC)是完全可能的,应用前景良好.
作者 孙红光 韩泾鸿 魏金宝 夏善红
机构地区 中国科学院电子学研究所传感技术国家重点实验室
出处 《中国机械工程》 EI CAS CSCD 北大核心 2005年第z1期176-178,共3页 China Mechanical Engineering
基金 国家自然科学基金资助重点项目(90307014)
关键词 ISFET REFET SOC CMOS
分类号 TN386.1 [电子电信—物理电子学] TP212.3 [自动化与计算机技术—检测技术与自动化装置]
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参考文献10

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同被引文献9

  • 1汪祖民,韩泾鸿,任振兴,杨海钢,夏善红.基于SOC的有机膜REFETs研究[J].纳米技术与精密工程,2006,4(3):208-211. 被引量：3
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  • 4Martinoia S,Massobrio G.A behavioral macro model of the ISFET in SPICE[J].Sensors and Actuators B,2000,62:182-189.
  • 5Martinoia S,Mass O G.A behavioral macro model of the ISFET in SPICE[J].Sensors and Actuators B,2000,62:182-189.
  • 6SIU W M, COBBOLD C. Basic properties of the electrolyte-SiO2-Si system: physical and theoretical aspects[J]. IEEE Trans Electron Devices, 1979,26(11): 1805-1815.
  • 7FUNG C D, CHEUNG P W, KO W H. A generalized theory of an electrolyte-insulator-semiconductor field-effect transistor[J].IEEE Trans Electron Devices, 1986,33(1): 8-18.
  • 8MARTINOIA S, MASSOBRIO G. A behavioral macromodel of the ISFET in SPICE[J]. Sensors and Actuators B, 2000, 62: 182-189.
  • 9GRATTAROLA M, MASSOBRIO G, MARTINOIA S. Modeling H^+-sensitive FET's with SPICE[J]. IEEE Trans Electron Device.s, 1992, 39(4): 813-819.

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中国机械工程
2005年 第z1期

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