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用穆斯堡尔效应研究铁硅化合物的形成过程 被引量:1

USING MOSSBAUER EFFECT TO STUDY FORMATION PROCESS OF IRON SILICIDE
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摘要 利用粒子束溅射的方法在纯净的Si衬底上沉积一层Fe膜,在强还原气氛下对其进行不同温度的退火处理采用非原位的穆斯堡尔效应和X射线衍射,研究了铁硅化合物的形成过程.实验发现,经30min在1000℃退火情况下,可观察到α-FeSi2和β-FeSi2同时共存的现象,分析表明,该现象来源于强还原气氛. Thin iron films were deposited on clean silicon substrates with an ion-beam sputtering system, then annealed at different high temperatures respectively under strongly reduced atmosphere. Using ex-situ Mossbauer effect and XRD technique, the process of different iron silicides' formation was observed. A new phenomenon was observed that α-FeSi2 and β-FeSi2 can coexist after annealing at 1000℃ for 30 min, which may be attributed to the strongly reduced atmosphere.
出处 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2002年第z1期38-40,共3页 Journal of Infrared and Millimeter Waves
关键词 铁硅 穆斯堡尔效应 X射线衍射. iron silicide, Massbauer effect, XRD.
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