Nb掺杂BaTiO_3薄膜的激光分子束外延及其特性

THE Nb DOPED BaTiO_3 EPITAXIAL THIN FILMSGROWN BY LASER MOLECULAR EPITAXYAND ITS CHARACTERISTICS

用激光分子束外延方法在ＳｒＴｉＯ３(１００)基底上外延生长了ＢａＮｂｘＴｉ１－ｘＯ３(０．０１≤ｘ≤０．０３)导电薄膜．原子力显微镜测得ＢａＮｂ０．３Ｔｉ０．７Ｏ３薄膜表面均方根粗糙度在２μｍ×２μｍ范围内为２．４(?),达到原子尺度光滑．霍尔测量表明ＢａＮｂｘＴｉ１-ｘＯ３薄膜为ｎ型导电薄膜;在室温下,ＢａＮｂ０．０２Ｔｉ０．９８Ｏ３、ＢａＮｂ０．２Ｔｉ０．８Ｏ３和ＢａＮｂ０．３Ｔｉ０．７Ｏ３薄膜的电阻率分别为２．４３×１０－４Ω·ｃｍ、１．９８×１０－４Ω·ｃｍ和１．２９７×１０－４Ω·ｃｍ,载流子浓度分别为５．９×１０２１ｃｍ－１、６．３７×１０２１ｃｍ－１和９．９×１０２ｌｃｍ-１．

The epitaxial BaNbx.Ti1-x O3(0.01≤x≤0. 3)conductive thin films on SrTiO3(100) substrates were grown by laser molecular beam epitaxy. The root-mean-square surface roughness of the deposited thin films is 2. 4 A within 2μm × 2μm area surface measured by atomic force microscopy, which means that the films are atomically smooth. The films are n-type conductive thin films confirmed by Hall measurements. The resistivity of BaNb0.02Ti0.98O3,BaNb0.2Ti0.8O3 and BaNb0.3Ti0.7O3 is 2.43×10-4Ω·cm,1.98×10-4Ω·cm and 1. 297 × 10-4Ω·cm, respectively, and the carrier concentration is 5.9×1021cm-1,6.37×1021cm-1and 9. 9×1021cm-1 , respectively, at the room temperature.