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AlGaAs∶Sn混晶中的两类类DX中心 被引量：1

TWO DX-LIKE CENTERS IN Sn-DOPED AlGaAs ALLOY SEMICONDUCTORS
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摘要 在测得Ａｌ０．２６Ｇａ０．７４Ａｓ:Ｓｎ混晶中两类类ＤＸ中心的电子热俘获势垒精细结构后,研究和确定了其相关的束缚能、晶格驰豫能和光离化能．采用第一原理赝势法的计算和分析结果表明,Ｓｎ施主杂质次近邻Ａｌ/Ｇａ原子的不同局域组分所引起的Ｓｎ杂质及其最近邻Ａｓ原子的不同晶格驰豫,是产生两类类ＤＸ中心能级精细结构的主要原因． The corraspondent values of binding energy, lattices relaxation energy and optical ionization energy of two DX - like centers in Al0.26Ga0.74 As: Sn alloy semiconductors were deduced after their fine structures of capture barrier were obtained. The ab initio calculations show that fine structures of the two DX-like centers are mainly contributed to different local configurations of the second nearest Al/Ga atoms of Sn donor impurities caused by the alloy random effect.
作者 肖细凤 康俊勇
机构地区 厦门大学物理系
出处 《红外与毫米波学报》 SCIE EI CAS CSCD 北大核心 2002年第z1期83-86,共4页 Journal of Infrared and Millimeter Waves
基金 国家"863"计划(批准号715-010-0022) 国家自然科学基金(批准号69976023) 福建省自科学基金(批准号A0020001)以及教育部基金部分资助课题
关键词 AlGaAs∶Sn 第一原理赝势法 类DX中心. AlGaAs:Sn, ab initio calculations, DX-like centers
分类号 TN2 [电子电信—物理电子学]
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参考文献10

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同被引文献13

  • 1张永刚,顾溢,朱诚,郝国强,李爱珍,刘天东.短波红外InGaAs/InP光伏探测器系列的研制[J].红外与毫米波学报,2006,25(1):6-9. 被引量：13
  • 2郝国强,张永刚,顾溢,李爱珍,朱诚.气态源分子束外延生长扩展波长InGaAs探测器性能分析(英文)[J].红外与毫米波学报,2006,25(4):241-245. 被引量：4
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  • 5Chand N, Henderson T, Klem J, et al. Comprehensive analysis of Si-doped Alx Ga(1-x)As (x =0 to 1 ) : Theory and experiments[J]. Phys. Rev. B, 1984, 30: 4481-4492.
  • 6Lang D V, Logan R A, Jaros M. Trapping characteristics and a donor-complex (DX) model for the persistent-photoconductivity trapping center in Te-doped Alx Ga(1-x) As [ J ]. Phys. Rev. B, 1979, 19: 1015-1030.
  • 7Watanabe M O, Morizuka K, Mashita M, et al. Donor levels in Si-Doped AlGaAs grown by MBE [ J ]. Jpn. J. Appl. Phys., 1984 23: L103-L105.
  • 8Watanabe M O, Maeda H. Electron activation energy in SiDoped AlGaAs grown by MBE[J]. Jpn. J. Appl. Phys., 1984, 23: L734-L736.
  • 9Vurgaftman I, Meyer J R, Ram-Mohan L R. Band parameters for Ⅲ-Ⅴcompound semiconductors and their alloys [J]. J. Appl. Phys. , 2001, 89: 5815-5875.
  • 10Levinshtein M, Rumyantsev S, Shur M. Handbook Series on Semiconductor Parameters [ M ]. Vol. 2 Singapore : World Scientific, 1999, Chap. 1, 5.

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红外与毫米波学报
2002年 第z1期

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