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用XPS研究Na_2S钝化的GaAs(100)表面 被引量:1

XPS studies on GaAs (100) surface passivated by Na_2S
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摘要 本文用Na_2S·9H_2O的水溶液及乙醇和异丙醇溶液对GaAs表面进行了钝化处理;用X射线光电子能谱仪(XPS)对钝化表面的化学组成和价态以及钝化层的厚度进行了研究。结果表明,经不同的Na_2S溶液处理后GaAs表面的自然氧化层会被除去,表面生成硫化镓和硫化砷;硫化物的含量与硫化层厚度与所用溶液的极性有关;并对钝化机理进行了探讨。 GaAs surface was passivated using Na2S·9H2O aqueous and various alcohol solutions (ethanol and iso-propanol). X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical states, thickness of sul-fides layer on the GaAs surface treated in different sulfur containing solutions. It was found that the native oxide layer of GaAs surface is removed, gallium sulfide and As sulfide are formed. Ga-S and As-S bonds of GaAs treated with alcohol-based sulfur containing solutions are stronger than that treated in an aqueous solution. The model of passivation is also briefly discussed in this paper.
出处 《现代仪器》 2001年第3期28-30,共3页 Modern Instruments
关键词 GAAS 表面钝化 XPS GaAs Passivation XPS
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参考文献6

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同被引文献1

  • 1C. J. Standroff, R. N. Notterburg, J. C. Bischof et al., Dramaticenhanceament in the gain of a GaAs/A1GaAs heterostructrue bipolar transistor by surface chemical passivatilon, Appl. Phys.Lett., 1987,51(1) :33.

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