摘要
用射频溅射法制备了金属／半导体Ｆｅ_ｘ（Ｉｎ_２Ｏ_３）_(１－ｘ)颗粒膜。实验结果表明：纳米尺度的Ｆｅ颗粒比较均匀地分布在非晶态母体Ｉｎ_２Ｏ_３中。该样品在室温下表现出超顺磁弛豫，符合Ｌａｎｇｅｖｉｎ方程。光学测量表明：嵌Ｆ３的磁性颗粒膜，其电子的带间跃迁由Ｉｎ_２Ｏ_３的直接跃迁变为间接跃迁，基本吸收过红移；随磁性增强，局域态尾变宽，带隙变窄。
Metal/semiconductor Fe. (In_2O_3 )_(1-x)granular films were prepared by the rf-sputtering. The results show that the nanometersized Fe particles uniformly dispersed in the amorphous matrix In_2O_3. In room temperature, the magnetic behavior of the films shows super-paramagnetic relaxation and in good agreement with Langevin function. The spectra analyses indicate that the indirect photon transitions of granular Fe_x (In_2O_3)_(1-x) films substitute for the direct photon transitions of In_2O_3 film in the a...
出处
《昌潍师专学报》
2000年第2期3-6,共4页
Journal of Changwei Teachers College
基金
国家自然科学基金!59571016
