X射线透视对MOS电容性能的影响

Effect of X-radiographic inspection on the performance of MOS capacitor

MOS电容在计算机电路中有着广泛的应用,受X射线辐射后的平带电压和阀电压的飘移,对计算机性能的稳定有着很大的影响.作者利用SOFRON-1505C型X光机,对3种MOS电容CD130,CE28,CG28受X射线后的平带电压和阀电压的飘移量进行测试和分析,从而分析X射线辐射对MOS电容的影响.

MOS capacitors are used widely in computer circuits. The drifts of flat band voltage and threshold voltage in circuits affect the stability of computer performance very much. The drift level of flat band voltage and threshold voltage were measured by SOFRON-1505C model X-ray device after X-ray radiating three kind MOS capacitors CD130, CE28, CG28. The effect of X-ray irradiation on MOS capacitors was analyzed.