摘要
以能量为1.0 MeV,剂量为1.2×1013～1.2×1015/cm2电子束辐照VO2(A)薄膜。利用X射线衍射仪、扫描电镜、电阻温度测试仪和Fourier中红外光谱仪对电子辐照前后的薄膜进行测试,研究了辐照剂量对薄膜结构、光电特性的影响。结果表明:剂量为1.2×1013/cm2时,辐照主要是在薄膜中引入点缺陷;剂量为1.2×1015/cm2时,辐照在薄膜中产生明显的退火效应。辐照剂量增加会引起薄膜相变过程中电阻温度系数增加,使相变温度点发生变化,热滞回线宽度最大可增加89.1%,相变前后薄膜电阻值变化的数量级增大,晶粒尺寸经历了31.8 nm→21.3 nm→20.3 nm→33.5 nm的变化。半导体相薄膜的透过率受缺陷影响较大,金属相时主要受晶粒尺寸的影响。
Phase A vanadium dioxide [VO2(A)] films were irradiated by electron beams with different doses ranging from 1.2 × 1013-1.2 × 1015 /cm2 and at an energy of 1.0 MeV.The films before and after electron irradiation were tested by X-ray diffraction,scanning electron microscope,a self-designed resistance temperature instrument and Fourier mid-infrared spectrum.The effects of irradiation doses on the structure,electricity and optics characteristics of the film were investigated.The results show that a 1.2 × 1013 c...
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2008年第5期694-699,共6页
Journal of The Chinese Ceramic Society
基金
国家自然科学基金(10475058)资助项目
关键词
二氧化钒薄膜
电子辐照
相变
电阻温度系数
光透过率
vanadium dioxide film
electron irradiation
phase transition
resistance temperature coefficient
transmittance
