摘要
介绍了一种利用霍尔型离子源辅助电子束蒸发,在反应烧结碳化硅(RB-SiC)材料上制备硅改性薄膜的方法,研究了不同沉积速率下薄膜改性后的抛光效果。对样品进行了表面散射及反射的测量。通过样品的显微照片可知,硅膜层在沉积速率增大的条件下结构趋于疏松。在精细抛光镀制有硅改性薄膜的反应烧结碳化硅样品后,表面散射系数减小到1.46%,反射率接近抛光良好的微晶玻璃。温度冲击实验和表面拉力实验表明:硅膜无龟裂和脱落,性质稳定,与碳化硅基底结合良好。
An Ion Beam Assisted Deposition(IBAD) method based on end-Hall source was introduced to fabricate a Si coating on Reaction Bonded Silicon Carbide(RB-SiC) substrate.A high-quantity surface photograph was taken and the surface scattering at 635 nm and reflectance spectra were measured at room temperature.The experimental results show that the films become loose under fast deposition rates.The coefficient of surface scattering is decreased from 3.56% to 1.46% after polishing the modified surface on the RB-SiC ...
出处
《光学精密工程》
EI
CAS
CSCD
北大核心
2008年第3期381-385,共5页
Optics and Precision Engineering
基金
国家自然科学基金资助项目(No.60478035)
关键词
反应烧结碳化硅
表面改性
离子辅助沉积
霍尔源
表面散射系数
Reaction Bonded Silicon（RB-SiC）
surface modification
Ion Beam Assisted Deposition（IBAD）
end-Hall source
coefficient of surface scattering
