摘要
设计并生长了一种新的InP/InGaAs/InP DHBT结构材料,采用在基区和集电区之间插入两层不同禁带宽度的InGaAsP四元系材料的阶梯缓变集电结结构,以解决InP/InGaAs/InP DHBT集电结导带尖峰的电子阻挡效应问题。采用气态源分子束外延(GSMBE)技术,通过优化生长条件,获得了高质量的InP、InGaAs以及与InP晶格相匹配的不同禁带宽度的InGaAsP外延材料。在此基础上,成功地生长出带有阶梯缓变集电区结构的InP基DHBT结构材料。
A new InP/InGaAs/InP DHBT structure with step-graded composite collector has been designed and grown in this work.Two InGaAsP layers with different band gaps were inserted between collector and base to eliminate the carrier blocking effect.The InP/InGaAs/InP DHBT structures were grown by gas source molecular beam epitaxy.A good crystalline quality of InP,InGaAs and InGaAsP materials was obtained through optimizing the growth conditions.The InP/InGaAs/InP DHBT structures were also grown successfully.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2008年第1期138-141,148,共5页
Research & Progress of SSE
基金
国家重点基础研究规划(973)项目(批准号:2002CB311902)
国家自然科学基金项目(批准号:60676062)
关键词
双异质结双极晶体管
气态源分子束外延
磷化铟
阶梯缓变集电区
double heterojunction bipolar transistor
gas source molecular beam epitaxy
indium phosphide
step-graded composite collector
