摘要
采用平衡式结构设计了微波宽带低噪声放大器,测试结果:在频率为8～18GHz的宽带内增益大于30dB,增益平坦度小于3dB,噪声系数小于2.0dB,输入输出驻波比小于2.5,1dB压缩点输出功率为15.8dBm。该放大器制作在氧化铝陶瓷基板上。
A broadband pHEMT low noise amplifier was designed and manufactured.Microstrip circuit and balanced techniques were used to design the circuit.The amplifier was assembled on Al2O3 substrate,covering the frequency of more than 1 octave band range from 8 GHz to 18 GHz,achieving performances measured:gain>30 dB,gain flatness<3 dB,noise figure<2.0 dB,input and output VSWR<2.5,and 1 dB compress point output power 15.8 dBm.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2008年第1期75-80,共6页
Research & Progress of SSE
基金
国家重点基础研究发展规划项目(2007CB310605)资助
