4H-SiC欧姆接触与测试方法研究

4H-SiC Ohmic Contact and Measure Technology

主要针对不同金属和工艺条件下的4H-SiC欧姆接触特性进行对比研究,形成4H-SiC的优良欧姆接触的最佳条件。通过TLM方法结合四探针测量得到特征接触电阻率,测得NiCr和Ni与4H-SiC的最佳特征接触电阻率分别达到ρc=9.02×10-6Ω.cm2,ρc=2.22×10-7Ω.cm2,能够很好满足SiC器件的需要。

In this paper,the characteristics of the 4H-SiC ohmic contact for different metals and process conditions were studied.The best condition for ohmic contact process was obtained,which is the base of the fabrication of the SiC devices.The process flow chart of ohmic contact was also introduced,the specific contact resistivity with TLM and Four-Probe measure was obtained.The best results for specific ohmic contact respectively are ρc=9.02×10-6 Ω·cm2 for NiCr/SiC and ρc=2.22×10-7 Ω·cm2 for Ni/SiC resistivity.