Ni/4H-SiC肖特基势垒二极管研制

Development of Ni Schottky Barrier Diode on 4 H-SiC

采用微电子平面工艺,高真空电子束热蒸发金属Ni分别作肖特基接触和欧姆接触,二级场限环终端表面保护,研制出Ni/4H-SiC肖特基势垒二极管(SBD)。I-V特性测量说明,Ni/4H-SiCSBD有较好的整流特性,热电子发射是其主要的运输机理。反向击穿电压达1500V,理想因子为1.2,肖特基势垒高度为0.92eV。

With microelectronics plane technology and the electron beam evaporation used to deposit metal Ni to form the Schottky contact and ohmic contact respectively in high vacuum ambient,Ni/4H-SiC Schottky barrier diodes with the in structures containing two-FLR were made.Measurents of the I-V characteristics of these diodes show that the devices have good rectifying property and thermionic emission current is the dominant conduction mechanism for these Schottky contacts.The experimentally obtained values of brea...