Vanadium Defects Formation Mechanism in Undoped GaN Grown on Silicon

Vanadium Defects Formation Mechanism in Undoped GaN Grown on Silicon

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摘要 V defects in GaN layer grown on Si (111) using metalorganic chemical vapor deposition (MOCVD) were investigated by atomic force microscopy (AFM), plan-view transmission electron microscopy (TEM) and energy-dispersive X-ray spectrometer (EDS). Dislocations are the origination of V defects. Stress field around dislocations induce the concentration of C atoms, furthermore, slow growth rate on those {10-11} planes are suggested as being responsible for the initiation of V defects. The formation mechanism of V defects was discussed.

作者 Zhao Liwei Liu Caichi Teng Xiaoyun Hao Qiuyan Sun Shilong Zhang Wei

机构地区 School of Material Science and Engineering

出处《Journal of Rare Earths》 SCIE EI CAS CSCD 2006年第z1期41-44,共4页 稀土学报（英文版）

基金 Project supported by Program for New Century Excellent Talents in University and Nature Science Foundation of Hebei Province (E2005000042)

关键词 undoped GaN VANADIUM DEFECT DISLOCATION transmission electron MICROSCOPY

分类号 TN304.1 [电子电信—物理电子学]

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Journal of Rare Earths

2006年第z1期

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Vanadium Defects Formation Mechanism in Undoped GaN Grown on Silicon

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