Effect of Rapid Thermal Process on Oxygen Precipitates in Heavily Sb-Doped Silicon Wafer

Effect of Rapid Thermal Process on Oxygen Precipitates in Heavily Sb-Doped Silicon Wafer

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摘要 Oxygen precipitates in heavily Sb-doped silicon after rapid thermal process (RTP) in Ar ambient were investigated by RTP at high temperature following annealing at 800 ℃ for 4 h and 1000 ℃ for 16 h. RTP temperature and cooling rates were changed from 1200 to 1260 ℃ and from 10 to 100 ℃·s-1, respectively. The experiment results show that high density of oxygen precipitates is observed in heavily Sb-doped wafer. It is found that the oxygen precipitates in heavily Sb-doped silicon are enhanced at high cooling rate.

作者 Sun Shilong Hao Qiuyan Zhao Liwei Teng Xiaoyun Liu Caichi Xu Yuesheng

机构地区 Institute of Information Functional Materials

出处《Journal of Rare Earths》 SCIE EI CAS CSCD 2006年第z1期104-106,共3页 稀土学报（英文版）

基金 Projects supported by the National Natural Science Foundation of China (50572022), Natural Science Foundation of Tianjin, and Natural Science Foundation of Hebei Province (E2005000057)

关键词 OXYGEN PRECIPITATES VACANCY RTP DZ heavily Sb-doped silicon

分类号 TN304.1 [电子电信—物理电子学]

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Journal of Rare Earths

2006年第z1期

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Effect of Rapid Thermal Process on Oxygen Precipitates in Heavily Sb-Doped Silicon Wafer

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