摘要
A two-dimensional model was established in the rectangular co-ordinate to study the thermal stress in the sapphire single crystal grown by the improved Kyropoulos. In the simulation, the distribution, the maximum and minimum values of the thermal stress were calculated. In addition, the relationship between the thermal stress and the shouldering angles was obtained that for lower shouldering angles, the maximum of the thermal stress value is lower and the minimum value is higher. It indicates that the distribution of the thermal stress can be improved by decreasing the shouldering angles of the crystal during the growth process. To evaluate the model, the experiment was carried out and the results are in good agreement with the calculation.
