摘要
The combination of ferromagnetic metal(FM)and semiconductor(SC)for spin injection was studied and demonstrated with FM-SC-FM junction.The semiconductor was chosen to be doped Indium-Tin-Oxide(ITO).Both ITO single-layer film and CoFe-ITO-CoFe junction were sputtering deposited.The ITO single-layer film was n-type with a small resistance of about 100Ω/Square.I-V curves and Magnetoresistance(MR)effect of the CoFe-ITO-CoFe junction were measured at room temperature and 77 K.Results show that the CoFe forms an ohmic contact to ITO film.But at low temperature,the I-V curves show a Schottky-like characteristic,which is strongly affect by applied magnetic field.The MR effect was measured to be 1%at 77 K,which indicates a spin injection into semiconductor to be realized in this sandwich junction.
基金
This project was financially supported by the Key Program of NSFC(No.90306015).
