期刊文献+

Effect of oxygen precipitates in solar grade silicon on minority carrier lifetime and efficiency of solar cells

Effect of oxygen precipitates in solar grade silicon on minority carrier lifetime and efficiency of solar cells
下载PDF
导出
摘要 The effect of oxygen precipitates on minority carrier lifetime and performance of solar cell was studied by means of Fourier Transform Infrared Spectroscopy (FTIR), quasi-steady state photoconductance (QSSPCD), optical microscope, spectrum response and solar cell efficiency test. The minority carrier lifetime and performance of solar cell reduced depend on oxygen precipitates. A few of oxygen precipitates have formed after single-step annealing; and they do not impact the efficiency dramatically. Pre-annealing at 650 ℃ for 4 h enhances the oxygen precipitation when it is subjected to middle temperature annealing. The solar cells performance decayed sharply. Especially annealing at 950 ℃ for 3 h, the Vos and Isc of cells decrease 12% and 25% respectively. Few oxygen precipitates have formed in silicon after high temperature annealing at about 1050 ℃ whether pre-annealing is used or not, and the performance of cells is not be affected. The effect of oxygen precipitates on minority carrier lifetime and performance of solar cell was studied by means of Fourier Transform Infrared Spectroscopy (FTIR), quasi-steady state photoconductance (QSSPCD), optical microscope, spectrum response and solar cell efficiency test. The minority carrier lifetime and performance of solar cell reduced depend on oxygen precipitates. A few of oxygen precipitates have formed after single-step annealing; and they do not impact the efficiency dramatically. Pre-annealing at 650 ℃ for 4 h enhances the oxygen precipitation when it is subjected to middle temperature annealing. The solar cells performance decayed sharply. Especially annealing at 950 ℃ for 3 h, the Vos and Isc of cells decrease 12% and 25% respectively. Few oxygen precipitates have formed in silicon after high temperature annealing at about 1050 ℃ whether pre-annealing is used or not, and the performance of cells is not be affected.
出处 《Rare Metals》 SCIE EI CAS CSCD 2006年第z1期141-145,共5页 稀有金属(英文版)
基金 This project was financially supported by the National Natural Science Foundation of China (No.50572022).
关键词 SILICON oxygen precipitate solar cell ANNEALING silicon oxygen precipitate solar cell annealing
  • 相关文献

参考文献10

  • 1[1]Weber K.J.,Bkakers A.W.,Stocks M.J.,et al.A novel low-cost high-efficiency micromachined silicon solar cell.IEEE Electron Device Letters,2004,25(1):37.
  • 2[2]Miyagi M.,Wada K.,Qsaka J.,et al.,Effect of oxide precipitates on minority-carrier lifetime in Czochralski-grown silicon.Appl.Phys.,1982,40:719.
  • 3[3]ChakravartiS.N.,Garbarino P.L.,and Murty K.,Oxygen precipitate effects on Si n-p junction leakage behavior.Appl.Phys.,1982,40:581.
  • 4[4]Rivera A.,De Nijs J.M.M.,Balk P.,et al.,Oxygen-relateddefects in the top silicon layer of SIMOX;the effect of the thermal treatments.Material Science and Engineering B,2000,77.
  • 5[5]Mikkelsen J.C.,Jr.S.J.,and Pearton J.W.,Nitrogen in crystalline silicon,[in] MRS Symposia Proceeding,1986:59.
  • 6[6]Fair R.B.,Pearce C.W.,and Washburn J.,Impurity diffusion andgetting in silicon.MRS Symposia Proceeding,1985,36.
  • 7[7]Sopori B.L.,Influence of oxygen on the performance of siliconsolar cells,Photovoltaic Specialists Conference.Conference Record of theTwentieth IEEE,Las Vegas,NV,USA,1988:591.
  • 8[8]Hwang J.M.,and Schroder D.K.,Recombination lifetime in oxygenprecipitated silicon.IEEE Electron Device Letters,1986,7(3):172.
  • 9[9]Pesola M.,Von Boehm J.,and Mattila T.,et al.,Computational study of interstitial oxygen and vacancy-oxygen complexes in silicon.Physical Review B,1999,60(16):11449.
  • 10[10]Borghesi A.,Piaggi A.,Sascella A.,et al.,Infrared study of oxygen precipitate composition in silicon.Physical Review B,1992,46(7):4123.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部