摘要
A high-quality GaN film was (W-GaN) grown by hydride vapor phase epitaxy (HVPE) on metalorganic chemical vapor deposition (MOCVD) GaN templates with a tungsten (W) interlayer. A sample without interlayer was also grown at the same time for comparison. Significant reductions of dislocation density in W-GaN film is confirmed by the result of high-resolution X-ray diffraction and transmission electron microscope (TEM) observation. The improvement of optical properties of the W-GaN is confirmed by photoluminescence (PL) result. A shift of PL peak suggests that the strain is lower in the W-GaN than the film without W interlayer. This technique offers a potential path to obtain high-quality GaN film as free-standing substrate.
A high-quality GaN film was (W-GaN) grown by hydride vapor phase epitaxy (HVPE) on metalorganic chemical vapor deposition (MOCVD) GaN templates with a tungsten (W) interlayer. A sample without interlayer was also grown at the same time for comparison. Significant reductions of dislocation density in W-GaN film is confirmed by the result of high-resolution X-ray diffraction and transmission electron microscope (TEM) observation. The improvement of optical properties of the W-GaN is confirmed by photoluminescence (PL) result. A shift of PL peak suggests that the strain is lower in the W-GaN than the film without W interlayer. This technique offers a potential path to obtain high-quality GaN film as free-standing substrate.
基金
This work was supportedbythe National High Technology Research and Development Program(No.2002AA305304)and CNRS/ASC2005:Project18152,Natural Science Foundation Project(05ZR14139),International Cooperation Project(055207043)of the Shanghai Government andtheNational Natural Science Foundation ofChina(No.O62GJA1001).
