晶振芯片在高g值冲击下的失效机理分析

Failure mechanism of crystal oscillator under high-g shock

芯片是弹载存储测试系统的最基本的单元,它的抗强冲击能力直接影响测试系统的可靠性。为了研究芯片抗高过载能力,本实验利用Hopkinson杆对最典型的晶振芯片进行高g值冲击,以一维应力波理论估计芯片受到的加速度。对实验现象进行理论分析后得出:与应力波传播方向平行放置的芯片抗冲击性能要高于与应力波传播方向垂直的芯片。

The shock-resistibility of microchip affects the whole Stored Testing and Measuring System(STMS) directly. In order to determine the over-loading resistibility of the microchip, the experiments had been performed using Hopkinson bar, testing the most typical microchip-crystal oscillator. The acceleration was estimated according to the theory of one-dimensional stress wave. The analysis shows that, the shock-resistibility of microchip paralleling the direction of stress wave is stronger than those are vertical on the direction of stress wave.