射频无线应用的体连接和图形化SOI LDMOSFET的比较
Comparison of Body-Contact and Patterned-SOI LDMOSFETs for RF Wireless Applications
摘要
设计并制作了一种可应用于无线通信放大器的新型的图形化SOI LDMOSFET.该器件沟道下方的埋氧层是断开的.测试表明,输出特性曲线没有发现明显的翘曲效应,关态的击穿电压达13V,在VG=4V和VD=3.6V时fT为8GHz,直流和射频性能均优于同一芯片上相同工艺条件制备的体接触LDMOSFET.
参考文献8
-
1[2]Matsumoto S,Hiraoka Y,Sakai T.A high-efficiency thinfilm SOI power MOSFET having a self-aligned offset gate structure for multi-gigahertz applications.IEEE Trans Electron Devices,2001,48(6):1270
-
2[3]Murari B,Bertotti F,Vignola G A.Smart power ICs.SpringVerlag,1996
-
3[4]Fiorenza J G,Antoniadis D A.RF power LDMOSFET on SOI.IEEE Electron Device Lett,2001,22(143):139
-
4[5]Matasumoto S,Hiraoka Y,Sakai T.Radio-frequency performance of a state-of-art 0.5μm-rile thin film SOI power MOSFET.IEEE Trans Electron Devices,2001,48(6):1251
-
5[6]Fiorenza J G,Del Alamo J A.Experimental comparison of RF power LDMOSFETs on thin-film SOI and bulk silicon.IEEE Trans Electron Devices,2002,49(4):687
-
6[7]Ren Changhong,Cai Jun,Liang Y C,et al.The partial silicon-on-insulator technology for RF power LDMOSFET devices and on-chip microinductors.IEEE Trans Electron Divices,2002,49(12):2271
-
7[8]Park J M,Grasser T,Kosina H,et al.A numerical study of partial-SOI LDMOSFETs.Solid-State Electron,2003,(47):275
-
8[9]Dong Yemin,Wang Xi,Wang Xiang,et al.Low defect density and planar patterned SOI materials by masked SIMOX.Chem Phys Lett,2003,378:470
-
1程新红,宋朝瑞,俞跃辉,赵天麟,李树良.图形化SOI LDMOS功率器件的性能分析[J].微处理机,2005,26(4):1-2.
-
2程新红,杨文伟,宋朝瑞,俞跃辉,沈达升.A Novel LDMOS Structure in Thin Film Patterned-SOI Technology with a Silicon Window Beneath p Well[J].Journal of Semiconductors,2004,25(12):1580-1585.
-
3曲越,李德昌,习毓.图形化SOI LDMOS跨导特性的研究[J].电子器件,2007,30(6):2122-2124.
-
4程新红,宋朝瑞,杨文伟,俞跃辉.高性能图形化SOI功率器件的研制[J].功能材料与器件学报,2005,11(3):333-337. 被引量：2
-
5程新红,王洪涛,宋朝瑞,俞跃辉,袁凯,许仲德.适合基站放大器应用的图形化SOILDMOSFET的设计与分析[J].温州师范学院学报,2006,27(2):20-24.
-
6李家贵,李德昌.SOILDMOS晶体管的自加热效应[J].电子科技,2009,22(4):72-74. 被引量：3
-
7李文钧,孙玲玲,刘军.A Patterned SOI LDMOSFET by Masked SIMOX for RF Power Applications[J].Journal of Semiconductors,2007,28(4):480-483.
-
8杨荣,李俊峰,徐秋霞,海潮和,韩郑生,钱鹤.A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency[J].Journal of Semiconductors,2006,27(8):1343-1346.
-
9张海鹏,魏同立,冯耀兰,姚炜,宋安飞.PD SOI NMOSFET翘曲效应的温度模型[J].Journal of Semiconductors,2001,22(10):1320-1324. 被引量：2
-
10钱文生,刘冬华,胡君,段文婷,石晶.非外延集电区的超高压锗硅异质结双极晶体管[J].固体电子学研究与进展,2012,32(3):275-280. 被引量：1
