Er2O3单晶薄膜的生长及Er2O3/Si异质结的能带偏移
Epitaxial Growth of Er2O3 Films and Its Band Offsets on Si
摘要
利用分子束外延方法在p型Si(001)和Si(111)衬底上,在700℃0.93mPa的条件下实现了Er2O3单晶薄膜的生长.薄膜的结晶情况依赖于薄膜的生长温度和氧气压.较低的温度和氧气压下在薄膜内易生成硅化铒,薄膜也趋于多晶化.还利用光电子能谱对Er2O3/Si异质结的能带偏差进行了初步的研究.
参考文献9
-
1[1]Norton D P.Synthesis and properties of epitaxial electronic oxide thin-film materials.Mater Sci Eng R,2004,43:139
-
2[2]Liu J P,Zaumseil P,Bugiel E,et al.Epitaxial growth of Pr2O3 on Si (111) and the observation of a hexagonal to cubic phase transition during postgrowth N2 annealing.Appl Phys Lett,2001,79:671
-
3[3]Fissel A,Dabrowski J,Osten H J.Photoemission and ab initio theoretical study of interface and film formation during epitaxial growth and annealing of praseodymium oxide on Si(001).J Appl Phys,2002,91:8986
-
4[4]Dimoulas A,Vellianitis G,Travlos A,et al.Structural and electrical quality of the high-k dielectric Y2O3 on Si (001):dependence on growth parameters.J Appl Phys,2002,92:426
-
5[5]Afanasev V V,Stesmans A.Internal photoemission of electrons and holes from (100)Si into HfO2.Appl Phys Lett,2002,81:1053
-
6[6]Mikhelashvili V,Eisenstein G.Characteristics of electronbeam-gun-evaporated Er2O3 thin films as gate dielectrics for silicon.J Appl Phys,2001,90:5447
-
7[7]Mikhelashvili V,Eisenstein G,Edlman F,et al.Structural and electrical properties of electron beam gun evaporated Er2O3 insulator thin films.J Appl Phys,2004,95:613
-
8[8]Xu R,Zhu Y Y,Chen S,et al.Epitaxial growth of Er2O3films on Si (001).J Cryst Growth,2005,277:496
-
9[9]Chambers S A,Liang Y.Band discontinuities at epitaxial SrTiO3 on Si (001) heterojunctions.Appl Phys Lett,2000,77:1662
-
1赵雷,左玉华,王启明.SiGeC三元合金的研究进展[J].微纳电子技术,2004,41(7):1-9. 被引量：1
-
2李锋,张耀辉,江德生,王佑祥.In_xGa_(1-x)As/GaAs应变量子阱光学性质[J].红外与毫米波学报,1994,13(5):340-346.
-
3陆昉,王勤华,王建宝,蒋家禹,孙恒慧.结区中存在量子阱结构样品的C－V特性分析[J].Journal of Semiconductors,1996,17(4):245-251. 被引量：3
-
4班大雁,方容川,薛剑耿,陆尔东,徐世宏,徐彭寿.Si/ZnS极性界面能带偏移的同步辐射光电子能谱研究[J].物理学报,1997,46(9):1817-1825.
-
5张胜坤,蒋最敏,秦捷,林峰,胡冬枝,裴成文,陆方.电导法测量Si_(1-x)Ge_x/Si量子阱的能带偏移[J].Journal of Semiconductors,1999,20(2):139-142.
-
6周远明,田锋,钟才,梅菲,刘凌云,徐进霞,王远,张冉.ZnMgO/ZnO异质结构中极化对二维电子气的影响[J].材料导报,2015,29(12):140-144.
-
7朱燕艳,方泽波,徐闰,陈静,曹海静,李慧玉.Study on vacuum ultraviolet spectra of amorphous Er_2O_3 films on Si(001) substrates[J].Journal of Rare Earths,2011,29(9):888-890.
-
8武德起,姚金城,赵红生,常爱民,李锋.Leakage current mechanisms of ultrathin high-κ Er_2O_3 gate dielectric film[J].Journal of Semiconductors,2009,30(10):21-26.
-
9苑军军,仇庆林,朱燕艳.Si基Er_2O_3薄膜初始生长的原位RHEED和AES研究[J].微纳电子技术,2015,52(2):98-102.
-
10姚博,方泽波,朱燕艳,陈圣,李海蓉.Er_2O_3栅介质积累端电容频率色散效应的研究[J].功能材料,2011,42(11):2085-2088.
