自组织量子点的形成过程
Formation Process of S-K Quantum Dots
摘要
利用分子束外延技术(MBE)生长了一个分布很不均匀的InGaAs量子点样品.样品不同位置InGaAs的沉积量不同导致点的大小、密度分布不均匀.这种分布恰恰对应着量子点形成的不同时期,因此仅通过一个样品就可以把量子点的生长演变全过程展示出来.AFM和PL测试表明:随着InGaAs沉积量的增加,量子点的密度显著增加,量子点的尺寸分布渐趋均匀并倾向于一平衡值.
参考文献8
-
1[1]Arakawa Y,Sakaki H.Multidimensional quantum well laser and temperature dependence of its threshold current.Appl Phys Lett,1982,40:939
-
2[2]Ustinov V M,Malee N A,Zhukov A E,et al.InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3μm.Appl Phys Lett,1999,74 (19):2815
-
3[3]Saucedo-Zeni N,Gorbatchev A Y,Méndez-García V H.Improvement on the InAs quantum dot size distribution employing high-temperature GaAs(100) substrate treatment.J Vac Sci Technol B,2004,22:1503
-
4[4]Ruvimov S,Wemer P,Scheerschmidt K,et al.Structural characterization of (In,Ga)As quantum dots in a GaAs matrix.Phys Rev B,1995,51:14766
-
5[5]Leonard D,Krishnamurthy M,Fafard S,et al.Molecularbeam epitaxy growth of quantum dots from strained coherent uniform islands of InGaAs on GaAs.J Vac Sci Technol B,1994,12:1063
-
6[6]Howe P,Abbey B,Le Ru E C,et al.Strain-interactions between InAs/GaAs quantum dot layers.Thin Solid Films,2004,464/465:225
-
7[7]Kim M D,Lee D H,Kim T W,et al.Formation process for and strain effect in InAs quantum dots grown on GaAs substrates by using molecular beam epitaxy.Solid State Commun,2004,130(7):473
-
8[8]Ebiko Y,Muto S,Suzuki D,et al.Volume distributions of InAs/GaAs self-assembled quantum dots by Stranski-Krastanow mode.J Cryst Growth,1999,201/202:1150
-
1周星飞,施斌,胡冬枝,樊永良,龚大卫,蒋最敏.量子点的形成对Si/Ge界面互扩散的影响[J].Journal of Semiconductors,2002,23(7):731-734.
-
2王占国,刘峰奇,梁基本,徐波,丁鼎,龚谦,韩勤.大功率In(Ga)As/GaAs量子点激光器[J].Journal of Semiconductors,2000,21(8):827-829. 被引量：7
-
3李鑫,王晓伟,李雪飞,乔峰,梅嘉欣,李伟,徐骏,黄信凡,陈坤基.绝缘衬底上高密度均匀纳米硅量子点的形成与表面形貌[J].物理学报,2004,53(12):4293-4298. 被引量：4
-
4刘健,王一,郭祥,王继红,罗子江,郎啟智,赵振,周海月,丁召.多周期InGaAs量子点点阵与点链形貌研究[J].真空科学与技术学报,2016,36(12):1413-1417.
-
5纪雨.美研制成功双色量子点红外光探测器[J].光电子技术与信息,2005,18(4):64-64.
-
6赵震.退火及铟含量对InGaAs量子点光学特性的影响[J].强激光与粒子束,1999,11(4):433-438.
-
7周清,刘珂,罗子江,郭祥,周勋,丁召.MBE生长InGaAs/GaAs(001)多层矩阵式量子点[J].功能材料,2013,44(8):1128-1131. 被引量：1
-
8赵振,周海月,郭祥,罗子江,王继红,王一,魏文喆,丁召.InAs沉积量对InAs/GaAs量子点表面形貌的影响[J].功能材料,2015,46(23):23025-23030.
-
9杜卫兵.低频四线组平衡值──k1、e1、e2的计算[J].电信技术,1995(11):33-34.
-
10宁永强,刘云,王立军,高欣.InGaAs量子点激光器光增益的温度特性[J].红外与毫米波学报,2002,21(4):285-288. 被引量：2
