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硒化温度对CuInSe2薄膜性能的影响 被引量：1

Selenization Temperature and Properties of CuInSe2 Films
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摘要 采用中频交流磁控溅射方法沉积Cu-In薄膜,并采用固态源硒化方法制备CuInSe2(CIS)薄膜,考察了硒化温度对CIS薄膜性能的影响.采用SEM和EDS观察和分析了它们的表面形貌和成分,采用XRD表征了薄膜的组织结构,采用霍尔测试仪测量了薄膜的载流子浓度和霍尔迁移率.结果表明,Cu-In薄膜由In和Cu11In9两相组成,在不同的硒化温度下制备的CIS薄膜,均具有单一的黄铜矿CuInSe2相结构.随着硒化温度的升高,CIS薄膜的晶粒直径增大,当硒化温度达到550℃时,晶粒直径已接近于2 μm.硒化温度继续升高,晶粒之间出现孔洞和缝隙等缺陷.530℃的硒化温度下制得的弱p型CIS薄膜,最符合CuInSe2的化学计量比,最适于制备太阳能电池吸收层.
作者 丁晓峰 韩东麟 张弓 庄大明
机构地区 清华大学机械工程系
出处 《真空科学与技术学报》 EI CAS CSCD 北大核心 2006年第z1期32-35,共4页 Chinese Journal of Vacuum Science and Technology
基金 清华大学985基础研究基金项目(JC2003014)
关键词 CUINSE2 薄膜 太阳能电池 固态源硒化 磁控溅射 硒化温度
分类号 O484 [理学—固体物理]
  • 相关文献

参考文献14

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共引文献10

同被引文献15

  • 1方玲,张弓,庄大明,赵方红,杨伟方,吴敏生.溅射和硒化工艺对CIS薄膜性能的影响[J].太阳能学报,2003,24(z1):77-81. 被引量：2
  • 2孙云,孙国忠,敖建平.发展铜铟硒薄膜太阳电池天津独领风骚[J].天津科技,2005,32(2):11-13. 被引量：2
  • 3徐立珍,李彦,秦锋.薄膜太阳电池的研究进展及应用前景[J].可再生能源,2006,24(3):9-12. 被引量：22
  • 4刘玉萍,陈枫,郭爱波,李斌,但敏,刘明海,胡希伟.薄膜太阳能电池的发展动态[J].节能与环保,2006(11):21-23. 被引量：12
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  • 6Muller J, Nowoczin J,Sehmitt H. Composition, Structure and Optical Properties of Sputtered Thin Films of CuInSe2 [ J ]. Thin Solid Films, 2006,496 (2) : 364-370.
  • 7Jiang Fangdan, Feng Jiayou. Effect of Temperature on Selenization Process of Metallic Cu- In Alloy Precursors [ J ]. Thin Solid Films,2006,515(10) :1950-1955.
  • 8孙云 龚晓波 钟兵 等.固态源后硒化法制备CIS薄膜的研究.金属功能材料,2004,8(3):112-115.
  • 9龚晓波.铜铟硒薄膜太阳电池的材料研究[D].[S.l.]:南开大学,微电子学与固体电子学.
  • 10朴英美.CIS太阳电池中金属预置层与加氢后硒化法技术的研究[D].[s.l.]:南开大学,微电子与固体电子学.

引证文献1

真空科学与技术学报
2006年 第z1期

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