高压纳秒级双快源研究

High Voltage Nanosecond Pulse Edge Pulse Generator Study

试验用高压场效应管作为开关器件,做成脉冲幅度大于4kV、前后沿5ns左右的高压快脉冲源。介绍了该脉冲源的电路结构,着重从高压场效应管的开关基理,场效应管栅极的“过”驱动,多管串联等几方面分析了提高脉冲源输出特性的方法和途径。

The switches of high voltage MOS-FET is used to construct a fast high voltage pulse generator,whose pulse amplitude is over 4kV,pulse edges are about 5ns.The circuit construction of pulse generator is presented,the methods and approaches to improve the output characteristics of pulse generator of ns level are analyzed through the switch theory of high voltage MOS-FET,the over driving technology of MOS-FET,and the technology of series MOS-FETs.