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大剂量Mn离子注入GaAs的性质 被引量：1

High Dose Mn Implanted GaAs
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摘要 在室温条件下在半绝缘性GaAs衬底上进行了大剂量Mn离子的低能注入,并进行了不同条件的退火.借助于X射线衍射(XRD)和高分辨X射线衍射(HR-XRD)进行了结构分析,经过退火后生成的新相衍射峰增多,根据衬底(004)峰摇摆曲线分析结果退火后更多的Mn离子进入晶格.运用原子力显微镜分析了样品的表面,发现退火后突起的起伏度增加.磁性分析表明,退火样品的磁化强度增大.
作者 宋书林 陈诺夫 柴春林 尹志岗 杨少延 刘志凯
机构地区 中国科学院半导体所半导体材料科学重点实验室 中国科学院力学研究所国家微重力实验室
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第z1期24-27,共4页 半导体学报（英文版）
基金 国家自然科学基金(批准号:60176001,60206007),国家重点基础研究发展计划(批准号:G20000365,G2002CB311905)资助项目
关键词 低能注入 砷化镓 X射线衍射 梯度磁强计
分类号 TN304.7 [电子电信—物理电子学]
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参考文献11

  • 1[1]Sadowski J,Domagala J Z. Influence of defects on the lattice constant of GaMnAs. Phys Rev B,2004,69:075206
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同被引文献12

  • 1马宝珊,王文杰,苏付海,邓加军,蒋春萍,刘海林,丁琨,赵建华,李国华.GaMnAs的Raman光谱研究[J].红外与毫米波学报,2006,25(3):207-212. 被引量：2
  • 2Mack S, Myers R C, Heron J T, et al. Stoichiometric growth of high Curie temperature heavily alloyed GaMnAs[J]. Appl Phys Lett, 2008, 92 (19) : 192502-192502-3.
  • 3Rozkotova E, Nemec P, Horodyska P, et al. Light-induced magnetization precession in GaMnAs[J]. Appl Phys Lett, 2008, 92(12): 122507 -122507-3.
  • 4Kim Shinhee, Lee Hakjoon, Yoo Taehee, et al. Mapping of magnetic anisotropy in strained ferromagnetic semiconductor GaMnAs films. [J ]. Journal of Applied Physics , 2010, 107 (10): 103911-103916.
  • 5Hyunji Son, Sunjae Chung, Sun-young Yea, et al. Vertical gradient of magnetic anisotropy in the ferromagnetic semiconductor (Ga, Mn)As film[J]. Appl Phys Lett, 2010, 96(9):092105.
  • 6Dietl T, Ohno H, atsukura F, etal. Zener model description of ferromagnetism in zine-blende magnetic semiconductors [ J ]. Science, 2000, 287(5455): 1019-1022.
  • 7Yu K M, Walukiewiez W, Wojtowicz T, et al. Effect of the location of Mn sites in ferromagnetic Ga1-xMnx As on its Curie temperature[J]. Phys Rev B, 2002, 65(20): 201303.
  • 8Sadowski J, Domagala J Z. Influence of defects on the lattice constant of GaMnAs[J]. Phys Rev B, 2004, 69(7): 075206.
  • 9Z G, Strassburg M, Weerasekara A, et al. Lattice vibrations in hexagonal Ga1-x MnxN epitaxial films on c-plane sapphire substrates by infrared reflectance spectra[J]. Appl Phys Lett, 2006, 88 (6): 061914.
  • 10Maca F, Magek J, Electronic states in Ga1-x MnxAs: Substitutional versus interstitial position of Mn[J]. Phys Rev B, 2002, 65(23): 235209.

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Journal of Semiconductors
2005年 第z1期

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