生长条件及退火处理对磷化铟单晶结构完整性的影响
Influence of Growth and Annealing Conditions on Perfection of InP Single Crystals
摘要
利用X射线双晶衍射(XRD)技术研究了原生及退火处理后的磷化铟单晶的晶格完整性.原生磷化铟单晶中由于存在着大量的位错和高的残留热应力,导致晶格产生很大的畸变,表现为XRD半峰宽的值较高并且分布不均匀,甚至有些原生的磷化铟单晶片出现XRD双峰等.通过降低晶体生长过程的温度梯度,降低位错密度并减小晶体中的残留热应力可以提高晶体的完整性.利用高温退火处理也可有效地降低磷化铟晶体中的残留热应力.对磷化铟晶体生长过程中熔体的配比、掺杂浓度等条件对结构完整性的影响进行了分析.
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