CH3CSNH2/NH4OH钝化GaInAsSb/GaSb PIN红外探测器
CH3CSNH2/NH4OH Passivation on GaInAsSb/GaSb PIN Infrared Photodetectors
摘要
引入一种新的低毒化合物CH3CSNH2/NH 4OH对GaInAsSb化合物探测器的表面进行了钝化处理,可使其暗电流降低一个数量级,动态电阻增大25倍多,且钝化83天后保持良好的钝化效果,取得了与(NH4)2S溶液一样理想的钝化效果.并采用AES和XPS对钝化前后的GaInAsSb材料进行了分析.
基金
国家自然科学基金资助项目(批准号:60176011)
参考文献8
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