3[3]Pulfrey D L,Fathpour S. Performance predictions for n-p-n AlxGa1-x N/GaN HBTs. IEEE Trans Electron Devices,2001,48:597
4[4]Lee K P,Ren F,Pearton S J,et al. Effects of base structure on performance of GaN-based heterojunction bipolar transistors.Solid-State Electron,2003,47:1031
5[5]Han J, Baca A G,Shul R J, et al. Growth and fabrication of GaN/AlGaN heterojunction bipolar transistor. Appl Phys Lett,1999,74:2702
6[6]Ren F, Han J, Hickman R, et al. GaN/AlGaN HBT fabrication. Solid-State Electron. 2000,44 : 239
7[7]Makimoto T,Kumakura K,Kobayashi N. High current gain (》2000) of GaN/InGaN double heterojunction bipolar transistors using base regrowth of p-InGaN. Appl Phys Lett,2003,83:1036
8[8]Liu W. Handbook of Ⅲ-Ⅴ heterojunction bipolar transistors.New York:John Wiley & Sons,1998
9[9]Yuan J S. SiGe, GaAs, and InP heterojunction bipolar transistors. New York:John Wiley & Sons, 1999
