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大功率倒装结构GaN LED p电极研究 被引量:1

Investigation of p-Electrode in High Power GaN-LED Application
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摘要 从接触电阻、反射率、电流扩展等方面对Ni/Au/Ag,ITO/Ag,Ag等多种倒装结构p电极金属体系进行分析比较,给出了实现倒装结构大功率GaN LED p电极的多种设计方案.指出Ni/Au金属化体系在大功率LED应用中存在的热稳定性问题及Ru,Ir等新型金属体系实现GaN p电极接触的潜在优势.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第z1期161-164,共4页 半导体学报(英文版)
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