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GaAs/Ge太阳电池异常I-V特性曲线分析 被引量:1

Analysis on Abnormal I-V Curves of GaAs/Ge Solar Cells
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摘要 分析了GaAs/Ge单结太阳电池研制中两种异常I-V特性曲线出现的主要原因:GaAs/Ge界面的相互扩散,形成附加结或附加势垒;并获得与实验有很好吻合的计算模拟结果,进一步证实了理论分析.此外,在上述分析的指导下,通过降低生长温度和优化成核条件,成功获得了效率为20.95%(AM0,25℃,2cm× 4cm)的GaAs/Ge太阳电池.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第z1期192-195,共4页 半导体学报(英文版)
基金 国家重点基础研究发展计划资助项目(批准号:ZM200002B01)
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参考文献7

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同被引文献1

  • 1Christiana Honsberg & Stuart Bowden. Photovoltaics: Devices, Systems and Applications[CD]. US: University of New South Wales, Photovoltaics Special Research Center. 1998.

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