内嵌自组装InAs量子点调制掺杂场效应管的光电特性
Optical and Electrical Investigation of Embedded Self-Assembled InAs Quantum Dot Modulation Doped Field-Effect-Transistors
摘要
研究了阱中生长自组装InAs量子点的光谱特性,获得了室温1.265μm近红外荧光发光,探讨了与量子点尺寸分布相关的发光峰随温度的超常红移现象.制备了内嵌InAs量子点的异质结调制掺杂场效应晶体管,获得了高耐压的场效应器件电学特性,并有望制成新型红外光电探测场效应管.
基金
国家重点基础研究发展计划资助项目(批准号:2001CB309300)
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