摘要
利用射频磁控溅射法在低阻Si,Si O2/Si以及Pt/Ti/Si O2/Si等不同衬底上制备了Pb(Zr0.8Ti0.2)O3薄膜.利用XRD,SEM等对薄膜的结构性能进行了分析,结果发现不同衬底对溅射制备的PZT薄膜的结构有很大影响.在Pt/Ti/Si O2/Si衬底上制备的PZT薄膜经600℃退火1h后,薄膜表面光滑、无裂纹,XRD分析显示PZT薄膜呈完全钙钛矿结构,测试PZT薄膜的电学性能,表明PZT薄膜具有良好的介电性能.
Pb(Zr_ 0.8 Ti_ 0.2 )O_3 thin films were prepared on the different substrates of low resistance Si wafer, SiO_2/Si and Pt/Ti/SiO_2/Si by RF sputtering. The crystalline propertyies, microstructure, and electrical properties of PZT thin films were investigated by X-ray diffraction(XRD), scanning electron microscope(SEM) and other analysis tools .The experiment results indicate that the microstructure and electrical properties of sputtered PZT films are highly dependent on the different substrates. The PZT thin...
出处
《四川大学学报（自然科学版）》
CAS
CSCD
北大核心
2005年第S1期491-494,共4页
Journal of Sichuan University(Natural Science Edition)
基金
国家自然科学基金(60471044)
关键词
PZT薄膜
磁控溅射
衬底
PZT thin films
RF sputtering
substrate
