退火工艺对PLT薄膜结晶性能的影响

Influence of the Annealing Processes on Crystalline Properties of PLT Thin Films

用射频磁控溅射法在Si(100)衬底上制备了掺镧钛酸铅(PLT)铁电薄膜.研究了不同退火工艺对PLT薄膜结构的影响.发现在PbO气氛下退火能很好地抑制铅的挥发而得到具有钙钛矿结构的PLT薄膜.随着退火温度的逐渐升高,PLT薄膜的相经历了钙钛矿相-焦绿石相共存→纯钙钛矿相→钙钛矿相-焦绿石相共存的变化.探讨了焦绿石相的结构在铁电薄膜中的成因.发现随着退火温度的逐渐升高,PLT薄膜的晶粒逐渐增大,钙钛矿相质量百分比越高,轴比(c/a)也越大,PLT薄膜的铁电性越强.

Ferroelectric lanthanum-doped lead titanate (PLT) thin films have been fabricatedon Si(100)substrates by RF magnetron sputtering. The influence of different annealing processing under air ambient or PbO ambient on the crystalline properties of PLT films was studied. The experiment results show that ideal perovskite structure of PLT films can be obtained by annealing under PbO ambient, while PLT films annealed under air ambient contain perovskite phase as well as some other phases such as pyrochlore phase. T...