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Terfenol-D和Cymbal迭层器件的磁电耦合效应

Magnetoelectric Coupling Effect in Terfenol-D and Cymbal Laminates
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摘要 报道一种由Terfenol-D(Tb1-xDyxFe2)和Cymbal组成的新型器件.在器件中Cymbal位于两片Terfenol-D之间.在横向极化和横向磁化的模式(T-T)下,其磁电电压系数在0.5kOe的偏置磁场作用下为41.0mV/Oe(1kHz),大于Terfenol-D/PZT/Terfenol-D结构的磁电电压系数.磁电电压系数提高的原因起源于具有高压电系数的Cymbal和高磁致伸缩系数的Terfenol-D之间的耦合. A novel magnetoelectric (ME) device was designed and fabricated using a Cymbal located between two Terfenol-D (Tb_ 1-x Dy_ x Fe_ 2 ) plates. The device, operating in transverse magnetized/transverse polarized (T-T) mode, has a ME voltage coefficient of 41.0 mV/Oe at 1 kHz under a magnetic bias field of 0.5 kOe, which is larger than that of conventional Terfenol-D/PZT/Terfenol-D configuration. It is believed that the enhancement of ME effect is due to the coupling between the high piezoelectric response of C...
出处 《四川大学学报(自然科学版)》 CAS CSCD 北大核心 2005年第S1期498-500,共3页 Journal of Sichuan University(Natural Science Edition)
基金 国家自然科学基金委员会和香港研究资助局联合科研资助基金(9050172)
关键词 Terfonel-D CYMBAL 磁电耦合 Terfenol-D Cymbal magnetoelectric coupling
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