摘要
概述了纳米碳化硅半导体材料,如采用各种成膜技术在硅衬底上制备的纳米碳化硅(nc-SiC:H)膜,镶嵌在各种介质如(α-SiC:H。
This review describes recent advances in photoluminescence of nanometer silicon carbide semiconductor materials,such as nc-SiC:H films prepared by all kinds of films preparation technology and nc-SiC embedded in α-SiC:H?SiO_2 or ZSM-5.
出处
《嘉应学院学报》
2004年第6期26-28,45,共4页
Journal of Jiaying University
关键词
纳米碳化硅
光致发光
发光机制
SiC
photoluminescence
light-emitting mechanism
